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Magneto-valve Effect Based On Magnetic Insulator
May 15, 2018

Transistors are the cornerstone of modern semiconductor devices. Computer chips control the flow of electrons through transistors. In order to further improve the storage density and computing speed of computers, there is an urgent need to develop smaller size transistor units. Today, microelectronics technology has stepped into the 10 nm process process. Due to the physical bottlenecks such as atomic limit and quantum effect, it is becoming more and more difficult to continue to push down new process nodes. To continue to improve the performance of semiconductor devices, researchers are trying to find new alternatives.

Faced with the needs of information storage and logic operations in the post-Moore era, the Spintronic Device has provided a broad development for the development of the next generation of microelectronic devices with smaller cell size, non-volatile, low power consumption, and high speed. Prospects for research. Among them, the spin valve (Spin Valve) is a core unit of various types of spintronic devices, and generally includes a sandwich core structure (FM1/NM/FM2) consisting of two layers of ferromagnetic metal and a non-magnetic intermediate layer due to spin polarization. The electrons are transported between the two ferromagnetic layers so that the resistance of the device is modulated by the relative orientation of the two ferromagnetic layers. Spin-valve-based room-temperature giant magnetoresistance (GMR, 1988) and room-temperature tunneling magnetoresistance (TMR, 1995) devices have been widely used in high-density information storage and sensors such as magnetic hard disks, magnetic random access memories, and magnetic sensors. In the article, two scientists, A. Fert of France and P. Grünberg of Germany, won the 2007 Nobel Prize in physics for their discovery of giant magnetoresistance (GMR) effect.

Magnon is a quasi-particle quantized by Spin Wave. It can transfer the angular momentum of a single spin flipping to the entire magnetic system in the form of fluctuations. Therefore, it can perform long-distance, high-efficiency self- The propagation of spin information in the best materials can reach a length of about 1 cm, without significant energy attenuation and heat dissipation, which cannot be achieved in conventional electron-based spin devices and is therefore further developed. Magneto-spin-based devices and circuits have attracted widespread attention from researchers. Recently, a German research team has initially modeled how these currents can be formed in an integrated amplitude loop and connected to the elements only on a two-dimensional scale. In order to achieve magnetic spin-based logic, storage, and various circuit devices, such as transistors in semiconductor devices and spin valves in spintronic devices, there is an urgent need to develop a basic core unit called Magnon Valve. To achieve the magnetic spin information storage and manipulation of various device features.

 

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